1/9 july 2004 STW14NM50 n-channel 550v @ tjmax - 0.32 ? - 14a to-247 mdmesh? mosfet table 1: general features typical r ds (on) = 0.32 ? high dv/dt and avalanche capabilities 100% avalanche rated low input capacitance and gate charge low gate input resistance tight process control and high manufactoring yields description the mdmesh? is a new revolutionary mosfet technology that associates the multiple drain pro- cess with the company?s powermesh? horizon- tal layout. the resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. the adoption of the company?s proprierati strip tech- nique yields overall dynamic performance that is significantly better than that of similar completi- tion?s products. applications the mdmesh? family is very suitablr for increase the power density of high voltage converters allow- ing system miniaturization and higher efficiencies. table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss ( @ tjmax) r ds(on) i d STW14NM50 550 v < 0.35 ? 14 a to-247 sales type marking package packaging STW14NM50 w14nm50 to-247 tube rev. 5 obsolete product(s) - obsolete product(s)
STW14NM50 2/9 table 3: absolute maximum ratings ()pulse width limited by safe operating area (*)limited only by maximum temperature allowed (1)i sd 14a, di/dt 100a/s, v dd v (br)dss , t j t jmax. table 4: thermal data table 5: avalanche characteristics electrical characteristics (t case =25c unless otherwise specified) table 6: on /off symbol parameter value unit v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 14 a i d drain current (continuous) at t c = 100c 8.8 a i dm (1) drain current (pulsed) 56 a p tot total dissipation at t c = 25c 175 w derating factor 1.28 w/c dv/dt peak diode recovery voltage slope 6 v/ns t stg storage temperature ?65 to 150 c t j max. operating junction temperature 150 c rthj-case thermal resistance junction-case max 0.715 c/w rthj-amb thermal resistance junction-ambient max 30 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 12 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 400 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5v r ds(on static drain-source on resistance v gs = 10 v, i d = 6 a 0.32 0.35 ? obsolete product(s) - obsolete product(s)
3/9 STW14NM50 electrical characteristics (continued) table 7: dynamic table 8: source drain diode (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) pulse width limited by safe operating area. (3) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d =6a 5.2 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 1000 180 25 pf pf pf c oss eq (3) . equivalent output capacitance v gs = 0 v, v ds = 0 to 400 v 90 pf r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 1.6 ? t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 250 v, i d = 6 a, r g = 4.7 ?, v gs = 10 v (see figure 15) 20 10 19 8 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v, i d = 12 a, v gs = 10 v (see figure 18) 28 8 15 38 nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 14 56 a a v sd (1) forward on voltage i sd = 12 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 12 a, di/dt = 100 a/s v dd = 100v (see figure 16) 270 2.23 16.5 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 12 a, di/dt = 100 a/s v dd = 100v, t j = 150c (see figure 16) 340 3 18 ns c a obsolete product(s) - obsolete product(s)
STW14NM50 4/9 figure 3: safe operating area figure 4: output characteristics figure 5: transconductance figure 6: thermal impedance figure 7: transfer characteristics figure 8: static drain-source on resistance obsolete product(s) - obsolete product(s)
5/9 STW14NM50 figure 9: gate charge vs gate-source voltage figure 10: normalized gate thereshold volt- age vs temperature figure 11: dource-drain diode forward char- acteristics figure 12: capacitance variations figure 13: normalized on resistance vs tem- perature obsolete product(s) - obsolete product(s)
STW14NM50 6/9 figure 14: unclamped inductive load test cir- cuit figure 15: switching times test circuit for resistive load figure 16: test circuit for inductive load switching and diode recovery times figure 17: unclamped inductive wafeform figure 18: gate charge test circuit obsolete product(s) - obsolete product(s)
7/9 STW14NM50 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ? p 3.55 3.65 0.140 0.143 ? r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data obsolete product(s) - obsolete product(s)
STW14NM50 8/9 table 9: revision history date revision description of changes 05-july-2004 5 the document change from ? preliminary ? to ? complete ? . new stylesheet. obsolete product(s) - obsolete product(s)
9/9 STW14NM50 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. obsolete product(s) - obsolete product(s)
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